Model: IRF520N
Manufacturer: IR
Manufacturer Part No: IRF520N
Package / Case: TO-220
RoHS: Yes
Datasheet: Click Here
Specifications
Transistor Type:MOSFET
Transistor Polarity:N Channel
Drain Source Voltage, Vds:100V
Continuous Drain Current, Id:33A
On Resistance, Rds(on):44mohm
Rds(on) Test Voltage, V..
KES 100.00
Model: IRF540N
TRANSISTOR, IRF540, N CHANNEL POWER MOSFET, 100V, 27A, TO-220..
KES 150.00
Model: IRFZ44N
TRANSISTOR, IRFZ44N, N CHANNEL POWER MOSFET, 55V, 49A, TO-220AB
..
KES 150.00
Model: IRLZ44N
Channel Type N Maximum Continuous Drain Current 47 A Maximum Drain Source Voltage 55 V Maximum Drain Source Resistance 22 mΩ Maximum Gate Threshold Voltage 2V Minimum Gate Threshold Voltage 1V Maximum Gate Source Voltage -16 V, +16 V Package Type TO-220AB Mounting Type Through Hole Transistor Config..
KES 200.00
Model: IRL510
FEATURES• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Logic-Level Gate Drive• RDS(on) Specified at VGS = 4 V and 5 V• 175 °C Operating Temperature• Fast Switching• Ease of Paralleling• Compliant to RoHS Directive 2002/95/ECPRODUCT SUMMARYVDS (V) 100RDS(on) VGS = 5.0V 0.54(Ω)Qg (Max.) (nC..
KES 150.00
Model: IRL520N
Channel Type N
Maximum Continuous Drain Current 10 A
Maximum Drain Source Voltage 100 V
Maximum Drain Source Resistance 180 mΩ
Maximum..
KES 150.00
Model: IRL540N
Specification Value
Supplier Package &nbs..
KES 150.00
Model: KFN60F
Type Designator: KF7N60FType of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 44.6 WMaximum Drain-Source Voltage |Vds|: 600 VMaximum Gate-Source Voltage |Vgs|: 30 VMaximum Drain Current |Id|: 7 AMaximum Junction Temperature (Tj): 150 °CRise Time (tr): 25 nSDrai..
KES 150.00
Model: NDP6020P
If you’ve ever wondered how to control high current devices from a low-power microcontroller, a MOSFET is what you need. The NDP6020P is a very common MOSFET with very low on-resistance and a control voltage (aka gate voltage) that is compatible with most 5V and 3.3v microcontroller or mechanical sw..
KES 150.00
