IRLZ44N N-channel MOSFET, 47 A, 55 V HEXFET, 3-Pin TO-220AB

Channel Type N

Maximum Continuous Drain Current 47 A

Maximum Drain Source Voltage 55 V

Maximum Drain Source Resistance 22 mΩ

Maximum Gate Threshold Voltage 2V

Minimum Gate Threshold Voltage 1V

Maximum Gate Source Voltage -16 V, +16 V

Package Type TO-220AB

Mounting Type Through Hole

Transistor Configuration Single

Pin Count 3

Channel Mode Enhancement

Category Power MOSFET

Maximum Power Dissipation 110 W

Height 8.77mm

Typical Turn-Off Delay Time 26 ns

Series HEXFET

Maximum Operating Temperature +175 °C

Minimum Operating Temperature -55 °C

Typical Gate Charge @ Vgs 48 nC @ 5 V

Typical Input Capacitance @ Vds 1700 pF@ 25 V

Typical Turn-On Delay Time 11 ns

Transistor Material Si

Number of Elements per Chip 1