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Products meeting the search criteria
Model: QRD1114
The QRD1114 is a half-LED, half-phototransistor, all infrared reflective optical detector. It can be used to sense objects in close proximity or even detect the difference between black and white surfaces. Photodetectors like these are critical components for projects ranging from line-followin..
KES 300.00
Model: BPW77NA
PHOTO TRANSISTOR, NPN, SILICON
Wavelength Typ: 850nm
Power Consumption: 250mW
Viewing Angle: 10°
Transistor Case Style: TO-18
No. of Pins: 3
Packaging:..
KES 600.00
Model: SGPT5053C
5.0 mm (0.197") Flat Lens Phototransistor SGPT5053CColour: TransparentRange of Spectral Bandwidth：400---1100 nmWavelength of Peak Sensitivity: 940 nmCollector Emitter Breakdown Voltage: >30 VEmitter Collector Breakdown Voltage: >6 VCollector Dark Current: <100 nACollector Emitter ..
KES 30.00
Model: TIP120
TIP120 NPN Power Darlington Transistor
Manufacturer:ST
Manufacturer Part No:TIP120
Package / Case:TO-220
RoHS: Yes
Specifications
Product Category: Transistors Darlington
Configuration: Single
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 60 V ..
KES 50.00
Model: TIP 127 PNP
Characteristics of the TIP127 bipolar transistorType - PNPCollector-Emitter Voltage: -100 VCollector-Base Voltage: -100 VEmitter-Base Voltage: -5 VCollector Current: -5 ACollector Dissipation - 65 WDC Current Gain (hfe) - 1000Operating and Storage Junction Temperature Range -65 to +150 °CPackage - T..
KES 150.00
