
- Stock: Out Of Stock
- Model: IRL540N
- Dimensions: 0.46mm x 0.88mm x 1.05mm
- SKU: 2511
High-Performance Logic-Level N-Channel Power MOSFET
The IRL540 series is an advanced N-channel enhancement-mode power MOSFET designed specifically for high-efficiency power conversion, rapid switching transitions, and low-voltage gate drive applications. Utilizing proven planar technology and optimized silicon design, this discrete semiconductor combines exceptionally low on-state resistance with superior switching dynamics. Because it features a logic-level gate threshold, the device can be driven directly by 5V logic circuitry, microcontrollers, and digital signal processors without requiring complex external gate driver ICs. This significantly simplifies circuit design, lowers component count, and reduces overall bill-of-materials costs across a wide range of power electronics systems.
Exceptional Electrical Parameters and Switching Dynamics
Engineered to operate reliably under heavy load conditions, the IRL540 supports a maximum drain-source breakdown voltage rating of 100V and a continuous drain current of up to 36A at room temperature. The device minimizes conduction losses through an ultra-low maximum drain-source on-state resistance (RDS(on)) of 0.044 Ohms at 10V VGS, while maintaining excellent conduction characteristics at lower logic-level gate voltages. Capable of dissipating up to 140W of total power, this MOSFET demonstrates outstanding transient response with a typical fall time of just 11ns, minimizing switching power losses in high-frequency applications. An extended operating junction temperature range from -55 degrees Celsius to 175 degrees Celsius ensures high reliability in demanding thermal environments.
Versatile Application Use-Cases
Thanks to its robust voltage blocking capability, high continuous current throughput, and rapid response speed, the IRL540 is widely deployed across industrial, automotive, and consumer power management architectures. Primary use-cases include high-efficiency DC-DC converters, switched-mode power supplies (SMPS), pulse-width modulation (PWM) motor controllers for brushed DC motors, high-speed solenoid and relay drivers, class-D audio amplification stages, and solid-state load switching circuits. Its low gate charge requirement makes it ideal for high-frequency power distribution systems where minimizing gate drive power consumption is essential.
Standardized TO-220AB Packaging and Thermal Management
Housed in an industry-standard 3-pin TO-220AB through-hole package, the device features maximum package dimensions of 10.54mm in length, 4.69mm in width, and 8.77mm in height. The robust TO-220AB package is designed for easy through-hole printed circuit board assembly and includes a metal tab with a mounting hole for direct attachment to external aluminum heatsinks. This mechanical arrangement delivers a low junction-to-case thermal resistance path, allowing effective dissipation of heat away from the silicon die to maintain safe operating junction temperatures during high-power continuous duty.
Specification Value
Supplier Package TO-220AB
Category Power MOSFET
Configuration Single
Maximum Power Dissipation 140000mW
Number of Elements per Chip 1
Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 36A
Maximum Drain Source Resistance 0.044Ohm@10V
Maximum Drain Source Voltage 100V
Maximum Gate Source Voltage ±16V
Typical Fall Timeay Time 11ns
Minimum Operating Temperature -55°C
Maximum Operating Temperature 175°C
Mounting Through Hole
Pin_Count 3
Family IRL540
Product Width 4.69mm(Max)
Product Height 8.77mm(Max)
Product Length 10.54mm(Max)
Product Type MOSFET


