TIP32C BJT General Purpose Transistor

mplement this PNP TIP32C GP BJT from Fairchild Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Minimum DC Current Gain 25@1A@4V|10@3A@4V
Maximum Transition Frequency (MHz) 3(Min)
Product Category Bipolar Power
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Packaging Bulk
Maximum Collector Emitter Saturation Voltage (V) 1.2@375mA@3A
Type PNP
Configuration Single
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 100
Maximum Emitter Base Voltage (V) 5
Maximum Collector Emitter Voltage (V) 100
Maximum DC Collector Current (A) 3
Material Si
Maximum Power Dissipation (mW) 2000
Mounting Through Hole
Package Height (mm) 9.4(Max)
Package Length (mm) 10.67(Max)
Package Width (mm) 4.83(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-220
Supplier Package TO-220
Pin Count 3
Lead Shape Through Hole